2N5087 Datasheet, PDF (1/8 Pages) Motorola, Inc – CASE 29.04, STYLE 1 TO-92 (TO-226AA)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistor
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
Order this document
by 2N5087/D
2N5087
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
50
VCBO
50
VEBO
3.0
IC
50
PD
625
5.0
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
R_qJA
200
Thermal Resistance, Junction to Case
R_qJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Unit
°C/W
°C/W
Symbol
Min
V(BR)CEO
50
V(BR)CBO
50
ICBO
—
IEBO
—
Max
Unit
—
Vdc
—
Vdc
50
nAdc
50
nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces 2N5086/D)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1997