2N4036 Datasheet, PDF (1/4 Pages) Motorola, Inc – CASE 79.04, STYLE 1 TO-39 (TO-205AD)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by 2N4036/D
General Purpose Transistors
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol 2N4036 2N4037
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Base Current
Collector Current — Continuous
Continuous Power Dissipation
at or Below TC = 25°C
Linear Derating Factor
VCEO
VCBO
VEBO
IB
IC
PD
– 65
– 40
– 90
– 60
– 7.0
– 7.0
– 0.5
– 1.0
5.0
5.0
28.6
28.6
Continuous Power Dissipation
at or Below TA = 25°C
Linear Derating Factor
PD
1.0
1.0
5.72
5.72
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to +200
Lead Temperature
1/16″ from Case for 10 Seconds
TL
230
THERMAL CHARACTERISTICS
Characteristic
Symbol 2N4036 2N4037
Thermal Resistance, Junction to Case
R_qJC
35
35
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Sustaining Voltage(1)
(IC = – 100 mAdc, IB = 0)
2N4036
2N4037
Collector – Base Breakdown Voltage
(IC = – 0.1 mAdc)
2N4037
Collector Cutoff Current
(VCE = – 85 Vdc, VEB = – 1.5 Vdc)
(VCE = – 30 Vdc, VEB = – 1.5 Vdc, TC = 150°C)
2N4036
2N4037
Collector Cutoff Current
(VCB = – 90 Vdc, IE = 0)
(VCB = – 60 Vdc, IE = 0)
2N4036
2N4037
Emitter Cutoff Current
(VEB = – 7.0 Vdc, IC = 0)
2N4036
(VEB = – 5.0 Vdc, IC = 0)
2N4037
v v 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
mW/°C
Watts
mW/°C
°C
°C
Unit
°C/W
Symbol
VCEO(sus)
V(BR)CBO
ICEX
ICBO
IEBO
2N4036
2N4037
32 ₁
CASE 79–04, STYLE 1
TO–39 (TO–205AD)
Min
Max
Unit
Vdc
– 65
—
– 40
—
– 60
—
Vdc
mAdc
—
– 0.1
—
– 100
µAdc
—
– 1.0
—
– 0.25
µAdc
—
– 10
—
– 1.0
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1997