2N2369 Datasheet, PDF (1/6 Pages) Motorola, Inc – Switching Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N2369/D
Switching Transistors
NPN Silicon
COLLECTOR
3
2
BASE
2N2369
2N2369A*
*Motorola Preferred Device
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
15
Collector – Emitter Voltage
VCES
40
Collector– Base Voltage
VCBO
40
Emitter– Base Voltage
VEBO
4.5
Collector Current (10 ms pulse)
IC(Peak)
500
Collector Current — Continuous
IC
200
Total Device Dissipation @ TA = 25°C
PD
0.36
Derate above 25°C
2.06
Vdc
Vdc
Vdc
Vdc
mA
mA
Watt
mW/°C
Total Device Dissipation @ TC = 100°C
PD
Derate above 100°C
0.68
Watts
6.85
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to +200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
486
Thermal Resistance, Junction to Case
R_qJC
147
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mA, VBE = 0)
Collector – Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage (IC = 10 mA, IB = 0)
Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 150°C)
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0)
Base Current
(VCE = 20 Vdc, VBE = 0)
v v 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
2N2369
2N2369A
2N2369A
2N2369A
Symbol
V(BR)CES
VCEO(sus)
V(BR)CBO
V(BR)EBO
ICBO
ICES
IB
Preferred devices are Motorola recommended choices for future use and best overall value.
3
21
CASE 22–03, STYLE 1
TO–18 (TO–206AA)
Min
Max
Unit
40
—
Vdc
15
—
Vdc
40
—
Vdc
4.5
—
Vdc
mAdc
—
0.4
—
30
—
0.4
mAdc
—
0.4
mAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996