1N821A Datasheet, PDF (1/3 Pages) Motorola, Inc – TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW

MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
Temperature-Compensated
Zener Reference Diodes
Temperature-compensated zener reference diodes utilizing a single chip oxide passi-
vated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed
structure.
Mechanical Characteristics:
CASE: Hermetically sealed, all-glass
DIMENSIONS: See outline drawing.
FINISH: All external surfaces are corrosion resistant and leads are readily solderable.
POLARITY: Cathode indicated by polarity band.
WEIGHT: 0.2 Gram (approx.)
MOUNTING POSITION: Any
Maximum Ratings
Junction Temperature: – 55 to +175°C
Storage Temperature: – 65 to +175°C
DC Power Dissipation: 400 mW @ TA = 50°C
WAFER FAB LOCATION: Phoenix, Arizona
ASSEMBLY/TEST LOCATION: Phoenix, Arizona
1N821,A 1N823,A
1N825,A 1N827,A
1N829,A
TEMPERATURE-
COMPENSATED
SILICON ZENER
REFERENCE DIODES
6.2 V, 400 mW
CASE 299
DO-204AH
GLASS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. VZ = 6.2 V ± 5%* @ IZT = 7.5 mA) (Note 5)
JEDEC
Type No.
Maximum
Voltage Change
∆VZ (Volts)
(Note 1)
Ambient
Test Temperature
°C
±1°C
Temperature
Coefficient
For Reference Only
%/°C
(Note 1)
Maximum
Dynamic Impedance
ZZT Ohms
(Note 2)
1N821
0.096
– 55, 0, +25, +75, +100
0.01
15
1N823
0.048
0.005
1N825
0.019
0.002
1N827
0.009
0.001
1N829
0.005
0.0005
1N821A
0.096
0.01
10
1N823A
0.048
0.005
1N825A
0.019
0.002
1N827A
0.009
0.001
1N829A
0.005
0.0005
*Tighter-tolerance units available on special request.
Motorola TVS/Zener Device Data
6.2 Volt OTC 400 mW DO-35 Data Sheet
8-1