1N5820 Datasheet, PDF (1/6 Pages) Motorola, Inc – SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by 1N5820/D
™ Designer's Data Sheet
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features chrome barrier metal,
epitaxial construction with oxide passivation and metal overlap contact. Ideally
suited for use as rectifiers in low–voltage, high–frequency inverters, free
wheeling diodes, and polarity protection diodes.
1N5820
1N5821
1N5822
1N5820 and 1N5822 are
Motorola Preferred Devices
• Extremely Low vF
• Low Power Loss/High Efficiency
• Low Stored Charge, Majority Carrier Conduction
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.1 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16″ from case
• Shipped in plastic bags, 5,000 per bag
• Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the
part number
• Polarity: Cathode indicated by Polarity Band
• Marking: 1N5820, 1N5821, 1N5822
MAXIMUM RATINGS
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
CASE 267–03
PLASTIC
Rating
Symbol 1N5820 1N5821 1N5822
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
20
30
40
V
VRWM
VR
Non–Repetitive Peak Reverse Voltage
VRSM
24
36
48
V
RMS Reverse Voltage
VR(RMS)
14
21
28
V
v Average Rectified Forward Current (2)
VR(equiv) 0.2 VR(dc), TL = 95°C
(R_θJA = 28°C/W, P.C. Board Mounting, see Note 2)
IO
3.0
A
Ambient Temperature
Rated VR(dc), PF(AV) = 0
R_θJA = 28°C/W
TA
90
85
80
°C
Non–Repetitive Peak Surge Current
IFSM
80 (for one cycle)
A
(Surge applied at rated load conditions, half wave, single phase
60 Hz, TL = 75°C)
Operating and Storage Junction Temperature Range
TJ, Tstg
*65 to +125
°C
(Reverse Voltage applied)
Peak Operating Junction Temperature (Forward Current applied)
TJ(pk)
150
°C
*THERMAL CHARACTERISTICS (Note 2)
Characteristic
Thermal Resistance, Junction to Ambient
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32″ from case.
* Indicates JEDEC Registered Data for 1N5820–22.
Symbol
Max
R_θJA
28
Unit
°C/W
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Rev 2
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