UF10A60 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – Utra Fast Recovery Rectifier Diodes

MOSPEC
Utra Fast Recovery Rectifier Diodes
Designed for use in switching power supplies. inverters and as free wheeling
diodes. These state-of-the-art devices have the following features:
Low T_RR
High Surge Capacity
Low Power Loss, High efficiency
175 Operating Junction Temperature
Low Forward Voltage , High Frequency
High-Switching Speed 21(typ.) Nanosecond Recovery Time
Plastic Material used Carries Underwriters Laboratory
In compliance with EU RoHs 2002/95/EC directives
UF10A60
ULTRA FAST
RECTIFIERS
10 AMPERES
600 VOLTS
TO-220A
MAXIMUM RATINGS
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current ( per diode)
Total Device (Rated V_R),T_C=55
Peak Repetitive Forward Current
(Rate V_R, Square Wave, 20kHz,T_C=125 )
Non-Repetitive Peak Surge Current (Surge
applied at rate load conditions half-wave,
single phase, 60Hz)
Operating and Storage Junction Temperature
Range
V_RRM
V_RWM
V_R
V_R(RMS)
I_F(AV)
I_FM
I_FSM
T_J , T_stg
UF10A60
600
420
10
20
175
-65 to +175
Unit
V
V
A
A
A
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
( I_F =10 Amp T_C = 25 )
( I_F =10 Amp T_C = 125 )
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T_C = 25 )
( Rated DC Voltage, T_C = 125 )
Reverse Recovery Time
( I_F = 0.5 A, I_R =1.0 , I_rr =0.25 A )
Symbol Min
V_F
I_R
T_rr
TYPE MAX. Unit
2.2
2.5
V
1.95
2.3
25
uA
10
mA
20
25
ns
Typical Thermal Resistance junction to case
R_{θ j-c}
3.6
/w
DIM ^MILLIMETERS
MIN MAX
A 14.68 15.32
B
9.78 10.42
C 5.02 6.52
D 13.06 14.62
E
3.57 4.07
F
4.84 5.32
G
1.12 1.36
H 0.72 0.96
I
4.22 4.98
J
1.14 1.38
K
2.20 2.98
L
0.33 0.55
M 2.48 2.98
N
--- 1.00
O
3.70 3.90