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| SRF3030CE Datasheet, PDF (1/2 Pages) Mospec Semiconductor – Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers | |||
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MOSPEC
SRF3030CE Thru SRF3060CE
Switchmode
Full Plastic Dual Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These
state-of-the-art geometry features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes.
* Low Forward Voltage.
* Low Switching noise.
* High Current Capacity
* Guarantee Reverse Avalanche.
* Guard-Ring for Stress Protection.
* Low Power Loss & High efficiency.
* 150 Operating Junction Temperature
* Low Stored Charge Majority Carrier Conduction.
* Plastic Material used Carries Underwriters Laboratory
SCHOTTKY BARRIER
RECTIFIERS
30 AMPERES
30-60 VOLTS
ITO-220AB
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
SRF30
Symbol
Unit
30CE 35CE 40CE 45CE 50CE 60CE
VRRM
VRWM 30 35 40 45 50 60
V
VR
RMS Reverse Voltage
VR(RMS) 21 25 28 32 35 42
V
Average Rectifier Forward Current
Total Device (Rated VR),TC=100
IF(AV)
15
30
A
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
IFM
30
A
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
IFSM
225
A
halfware, single phase, 60Hz)
Operating and Storage Junction
Temperature Range
TJ , TSTG
-65 to +125
ELECTRIAL CHARACTERISTICS
Characteristic
SRF30
Symbol
Unit
30CE 35CE 40CE 45CE 50CE 60CE
Maximum Instantaneous Forward Voltage
( IF =15 Amp TC = 25 )
VF
( IF =15 Amp TC = 100 )
0.57
0.50
0.65
V
0.58
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25 )
IR
( Rated DC Voltage, TC = 125 )
0.5
mA
30
DIM MILLIMETERS
MIN MAX
A 15.05 15.15
B 13.35 13.45
C 10.00 10.10
D
6.55 6.65
E
2.65 2.75
F
1.55 1.65
G 1.15 1.25
H
0.55 0.65
I
2.50 2.60
J
3.00 3.20
K
1.10 1.20
L
0.55 0.65
M 4.40 4.60
N
1.15 1.25
P
2.65 2.75
O 3.35 3.45
Q 3.15 3.25
Common cathode
Suffix âCâ
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