SRF3030 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

MOSPEC
Switchmode
Full Plastic Dual Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These
state-of-the-art geometry features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes.
* Low Forward Voltage.
* Low Switching noise.
* High Current Capacity
* Guarantee Reverse Avalanche.
* Guard-Ring for Stress Protection.
* Low Power Loss & High efficiency.
* 125 Operating Junction Temperature
* Low Stored Charge Majority Carrier Conduction.
* Plastic Material used Carries Underwriters Laboratory
SRF3030 Thru SRF3060
SCHOTTKY BARRIER
RECTIFIERS
30 AMPERES
30-60 VOLTS
ITO-220AB
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
SRF30
Symbol
Unit
30 35 40 45 50 60
V_RRM
V_RWM 30 35 40 45 50 60
V
V_R
RMS Reverse Voltage
V_R(RMS) 21 25 28 32 35 42
V
Average Rectifier Forward Current
Total Device (Rated V_R),T_C=100
I_F(AV)
15
30
A
Peak Repetitive Forward Current
(Rate V_R, Square Wave, 20kHz)
I_FM
30
A
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
I_FSM
250
A
halfware, single phase, 60Hz)
Operating and Storage Junction
Temperature Range
T_J , T_STG
-65 to +125
ELECTRIAL CHARACTERISTICS
Characteristic
SRF30
Symbol
Unit
30 35 40 45 50 60
Maximum Instantaneous Forward Voltage
( I_F =15 Amp T_C = 25 )
V_F
( I_F =15 Amp T_C = 100 )
0.55
0.50
0.65
V
0.58
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T_C = 25 )
I_R
( Rated DC Voltage, T_C = 125 )
1.0
mA
30
DIM ^MILLIMETERS
MIN MAX
A 15.05 15.15
B 13.35 13.45
C 10.00 10.10
D
6.55 6.65
E
2.65 2.75
F
1.55 1.65
G 1.15 1.25
H
0.55 0.65
I
2.50 2.60
J
3.00 3.20
K
1.10 1.20
L
0.55 0.65
M 4.40 4.60
N
1.15 1.25
P
2.65 2.75
O 3.35 3.45
Q 3.15 3.25