SRF20120CE Datasheet, PDF (1/2 Pages) Mospec Semiconductor – Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

MOSPEC
Switchmode
Full Plastic Dual Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These
state-of-the-art geometry features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes.
* Low Forward Voltage.
* Low Switching noise.
* High Current Capacity
* Guarantee Reverse Avalanche.
* Guard-Ring for Stress Protection.
* Low Power Loss & High efficiency.
* 150 Operating Junction Temperature
* Low Stored Charge Majority Carrier Conduction.
* Plastic Material used Carries Underwriters Laboratory
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
V_RRM
V_RWM
V_R
RMS Reverse Voltage
V_R(RMS)
Average Rectifier Forward Current
Total Device (Rated V_R),T_C=100
I_F(AV)
Peak Repetitive Forward Current
(Rate V_R, Square Wave, 20kHz)
I_FM
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
I_FSM
halfware, single phase, 60Hz)
Operating and Storage Junction
Temperature Range
T_J , T_STG
SRF20120CE
120
84
10
20
20
200
-65 to +150
ELECTRIAL CHARACTERISTICS
Characteristic
Symbol
Maximum Instantaneous Forward Voltage
( I_F =10 Amp T_C = 25 )
V_F
( I_F =10 Amp T_C = 125 )
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T_C = 25 )
I_R
( Rated DC Voltage, T_C = 125 )
SRF20120CE
0.85
0.68
0.5
20
SRF20120CE
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
120 VOLTS
ITO-220AB
Unit
V
V
A
A
A
Unit
V
mA
DIM ^MILLIMETERS
MIN MAX
A 15.05 15.15
B 13.35 13.45
C 10.00 10.10
D
6.55 6.65
E
2.65 2.75
F
1.55 1.65
G 1.15 1.25
H
0.55 0.65
I
2.50 2.60
J
3.00 3.20
K
1.10 1.20
L
0.55 0.65
M 4.40 4.60
N
1.15 1.25
P
2.65 2.75
O 3.35 3.45
Q 3.15 3.25
Common Cathode
Suffix “C”