SR507-SR5100 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – Schottky Barrier Rectifiers

MOSPEC
SR507 Thru SR5100
Schottky Barrier Rectifiers
--- Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
Features
＊Low Forward Voltage.
＊Low Switching noise.
＊High Current Capacity
＊Guarantee Reverse Avalanche.
＊Guard-Ring for Stress Protection.
＊Low Power Loss & High efficiency.
＊150℃ Operating Junction Temperature
＊Low Stored Charge Majority Carrier Conduction.
＊Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
＊In compliance with EU RoHs 2002/95/EC directives
The marking is indicated by part no. with. “M”. ex:SR507M~SR5100M
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
507
V_RRM
V_RWM
70
V_R
SR
Unit
508 509 5100
80
90 100
V
RMS Reverse Voltage
VR_(RMS)
49
56
63
70
V
Average Rectifier Forward Current
I_O
5
A
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
I_FSM
125
A
halfware, single phase,60Hz )
Operating and Storage Junction
Temperature Range
T_J , T_STG
-65 to +150
℃
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
(I_F =5.0 Amp)
Maximum Instantaneous Reverse Current
(Rated DC Voltage, T_C = 25℃)
(Rated DC Voltage, T_C = 125℃)
Maximum Thermal Resistance Junction to
Case
Typical Junction Capacitance
(Reverse Voltage of 4 volts & f=1 MHz)
Symbol
V_F
I_R
R_θJc
C_P
SR
Unit
507 508 509 5100
0.75
0.85
V
0.5
20
30
300
275
mA
o_C/W
P^F
SCHOTTKY BARRIER
RECTIFIERS
5.0 AMPERES
70-100 VOLTS
DO-201AD
MILLIMETERS
DIM
MIN MAX
A
5.00 5.60
B 25.40
---
C
7.20 9.50
D
1.20 1.30
CASE---
Transfer molded
plastic
POLARITY---
Cathode indicated
polarity band