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SR502_16 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – Schottky Barrier Rectifiers
MOSPEC
SR502 Thru SR506
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
Features
*Low Forward Voltage.
*Low Switching noise.
*High Current Capacity
*Guarantee Reverse Avalanche.
*Guard-Ring for Stress Protection.
*Low Power Loss & High efficiency.
*150℃ Operating Junction Temperature
*Low Stored Charge Majority Carrier Conduction.
*Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
*Moisture Sensitivity Level: MSL-1
*ESD: 5KV(Min.) Humen-Body Model
* In compliance with EU RoHs 2002/95/EC directives
The marking is indicated by part no. with. “M”. ex:SR502M~SR506M
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
SR
Symbol
502 503 504 505 506
VRRM
VRWM
VR
20 30 40 50 60
Unit
V
RMS Reverse Voltage
Average Rectifier Forward Current
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
half-wave, single phase,60Hz )
Operating and Storage Junction
Temperature Range
VR(RMS) 14 21 28 35 42
V
IO
5.0
A
IFSM
150
A
TJ , TSTG
-65 to +150
℃
ELECTRIAL CHARACTERISTICS
Characteristic
SR
Symbol
Unit
502 503 504 505 506
Maximum Instantaneous Forward Voltage
(IF =5.0 Amp)
VF
Maximum Instantaneous Reverse Current
(Rated DC Voltage, TC = 25℃)
IR
(Rated DC Voltage, TC = 125℃)
Maximum Thermal Resistance from Junction
to ambient
RθJA
Typical Junction Capacitance
(Reverse Voltage of 4 volts & f=1 MHz)
CP
0.550
0.700
V
0.5
mA
20
30
oC/W
340
320
PF
SCHOTTKY BARRIER
RECTIFIERS
5.0 AMPERES
20-60 VOLTS
DO-201AD
MILLIMETERS
DIM
MIN MAX
A
5.00 5.60
B 25.40
---
C
7.20 9.50
D
1.18 1.22
CASE---
Transfer molded
plastic
POLARITY---
Cathode indicated
polarity band