S40D90CE Datasheet, PDF (1/2 Pages) Mospec Semiconductor – Schottky Barrier Rectifiers

MOSPEC
S40D90CE Thru S40D100CE
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
Low Forward Voltage.
Low Switching noise.
High Current Capacity
Guarantee Reverse Avalanche.
Guard-Ring for Stress Protection.
Low Power Loss & High efficiency.
150 Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction.
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
SCHOTTKY BARRIER
RECTIFIERS
40 AMPERES
90-100 VOLTS
TO-3P
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
V_RRM
V_RWM
V_R
S40D90CE
90
S40D100CE
100
RMS Reverse Voltage
V_R(RMS)
63
70
Average Rectifier Forward Current
Total Device (Rated V_R),T_C=100
I_F(AV)
20
40
Peak Repetitive Forward Current
(Rate V_R, Square Wave, 20kHz)
I_FM
40
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
I_FSM
300
halfware, single phase, 60Hz)
Operating and Storage Junction
Temperature Range
T_J , T_STG
-65 to +150
Unit
V
V
A
A
A
ELECTRIAL CHARACTERISTICS
Characteristic
Symbol S40D90CE
S40D100CE Unit
Maximum Instantaneous Forward Voltage
( I_F =20 Amp T_C = 25 )
V_F
( I_F =20 Amp T_C = 125 )
0.85
0.75
V
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T_C = 25 )
I_R
( Rated DC Voltage, T_C = 125 )
2.0
mA
80
DIM MILLIMETERS
MIN MAX
A 20.63 22.38
B 15.38 16.20
C
1.90 2.70
D
5.10 6.10
E 14.81 15.22
F 11.72 12.84
G 4.20 4.50
H
1.82 2.46
I
2.92 3.23
J
0.89 1.53
K
5.26 5.66
L 18.50 21.50
M 4.68 5.36
N
2.40 2.80
O 3.25 3.65
P
0.55 0.70
Common Cathode
Suffix “C”