S30D200C Datasheet, PDF (1/2 Pages) Mospec Semiconductor – Schottky Barrier Rectifiers

MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
Features
Low Forward Voltage.
Low Switching noise.
High Current Capacity
Guarantee Reverse Avalanche.
Guard-Ring for Stress Protection.
Low Power Loss & High efficiency.
150 Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction.
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
In compliance with EU RoHs 2002/95/EC directives
MAXIMUM RATINGS
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current ( per diode )
Total Device (Rated V_R)
Peak Repetitive Forward Current
(Rate V_R, Square Wave, 20kHz)
Non-Repetitive Peak Surge Current (Surge
applied at rate load conditions half-wave,
single phase, 60Hz)
Operating and Storage Junction Temperature
Range
V_RRM
V_RWM
V_R
V_R(RMS)
I_F(AV)
I_FM
I_FSM
T_J , T_stg
THERMAL RESISTANCES
Typical Thermal Resistance junction to case
R_{θ j-c}
S30D200C
200
140
15
30
30
200
-65 to +150
3.5
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
( I_F =15 Amp T_C = 25 )
( I_F =15 Amp T_C = 125 )
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T_C = 25 )
( Rated DC Voltage, T_C = 125 )
Symbol
V_F
I_R
S30D200C
0.95
0.85
0.2
20
S30D200C
SCHOTTKY BARRIER
RECTIFIERS
30 AMPERES
200 VOLTS
TO-3P
Unit
V
V
A
A
A
/w
Unit
V
DIM ^MILLIMETERS
MIN MAX
A 20.63 22.38
B 15.38 16.20
C 1.90 2.70
D 5.10 6.10
E 14.81 15.22
F 11.72 12.84
G
4.20 4.50
H 1.82 2.46
I
2.92 3.23
J
0.89 1.53
K
5.26 5.66
L 18.50 21.50
M 4.68 5.36
N 2.40 2.80
O
3.25 3.65
P
0.55 0.70
mA