S20T150CB Datasheet, PDF (1/2 Pages) Mospec Semiconductor – Schottky Barrier Rectifiers

MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Refractory metal capable of high
temperature operation metal. The proprietary barrier technology allows for
reliable operation up to 150℃ junction temperature. Typical application are in
switching Mode Power Supplies such as adaptors, DC/DC converters, free-
wheeling and polarity protection diodes.
Features
＊Low Forward Voltage.
＊Low Switching noise.
＊High Current Capacity
＊Guarantee Reverse Avalanche.
＊Guard-Ring for Stress Protection.
＊Low Power Loss & High efficiency.
＊175℃ Operating Junction Temperature
＊Low Stored Charge Majority Carrier Conduction.
＊Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
＊In compliance with EU RoHs 2002/95/EC directives
＊Mounting Torqure: 5 in-lbs.Max
S20T150CB
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
150 VOLTS
TO-220AB
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current ( per diode )
Total Device (Rated V_R),
Symbol
V_RRM
V_RWM
V_R
V_R(RMS)
I_F(AV)
S20T150CB
150
105
10
20
Unit
V
V
A
Non-Repetitive Peak Surge Current (Surge applied at
I_FSM
rate load conditions halfware, single phase, 60Hz)
250
A
Operating and Storage Junction Temperature Range
T_J , T_stg
-65 to +150
℃
THERMAL RESISTANCES
Typical Thermal Resistance junction to case ( per device ) R_θjc
3.6
℃/w
DIM ^MILLIMETERS
MIN MAX
A 14.68 15.32
B 9.78 10.42
C 5.02 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 2.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.98
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage ( per diode )
( I_F =0.1 Amp T_C = 25℃)
( I_F =5.0 Amp T_C = 25℃)
( I_F =10 Amp T_C = 25℃)
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T_C = 25℃)
( Rated DC Voltage, T_C = 125℃)
Symbol Min Typ. Max Unit
--- 0.38 0.40
V_F
V
--- 0.70 0.72
--- 0.77 0.80
I_R
--- 0.003 0.01
--- 5 7
mA