S20C150C Datasheet, PDF (1/2 Pages) Mospec Semiconductor – Schottky Barrier Rectifiers

MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These
state-of-the-art geometry features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes.
Features
Low Forward Voltage.
Low Switching noise.
High Current Capacity
Guarantee Reverse Avalanche.
Guard-Ring for Stress Protection.
Low Power Loss & High efficiency.
150 Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction.
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
S20C150C
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
150 VOLTS
TO-220AB
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
V_RRM
V_RWM
V_R
RMS Reverse Voltage
V_R(RMS)
Average Rectifier Forward Current (per diode)
Total Device (Rated V_R), T_C=100
I_F(AV)
Peak Repetitive Forward Current
(Rate V_R, Square Wave, 20kHz)
I_FM
Non-Repetitive Peak Surge Current (Surge applied
at rate load conditions halfware, single phase,
I_FSM
60Hz)
Operating and Storage Junction Temperature Range T_J , T_stg
ELECTRIAL CHARACTERISTICS
Characteristic
Symbol
Maximum Instantaneous Forward Voltage (per diode)
( I_F =10 Amp T_C = 25 )
V_F
( I_F =10 Amp T_C = 125 )
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T_C = 25 )
( Rated DC Voltage, T_C = 125 )
Maximum Thermal resistance Per lead (per device)
--- Junction to case
--- Junction to Ambient
I_R
R_ΘJA
R_θJc
S20C150C
150
105
10
20
20
150
-65 to +150
S20C150C
0.95
0.85
0.2
10
2.5
50
Unit
V
V
A
A
A
Unit
V
mA
DIM ^MILLIMETERS
MIN MAX
A 14.68 15.32
B
9.78 10.42
C 5.02 6.52
D 13.06 14.62
E
3.57 4.07
F
2.42 2.66
G
1.12 1.36
H 0.72 0.96
I
4.22 4.98
J
1.14 1.38
K
2.20 2.98
L
0.33 0.55
M 2.48 2.98
O
3.70 3.90
/W