S20C120C Datasheet, PDF (1/2 Pages) Mospec Semiconductor – Schottky Barrier Rectifiers

MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These
state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
Low Forward Voltage.
Low Switching noise.
High Current Capacity
Guarantee Reverse Avalanche.
Guard-Ring for Stress Protection.
Low Power Loss & High efficiency.
150 Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction.
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
V_RRM
V_RWM
V_R
RMS Reverse Voltage
V_R(RMS)
Average Rectifier Forward Current
Total Device (Rated V_R),T_C=100
I_F(AV)
Peak Repetitive Forward Current
(Rate V_R, Square Wave, 20kHz)
I_FM
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
I_FSM
halfware, single phase, 60Hz)
Operating and Storage Junction
Temperature Range
T_J , T_STG
S20C120C
120
84
10
20
20
200
-65 to +125
ELECTRIAL CHARACTERISTICS
Characteristic
Symbol
Maximum Instantaneous Forward Voltage
( I_F =10 Amp T_C = 25 )
V_F
( I_F =10 Amp T_C = 125 )
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T_C = 25 )
I_R
( Rated DC Voltage, T_C = 125 )
S20C120C
0.85
0.68
0.5
20
S20C120C
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
120 VOLTS
TO-220AB
Unit
V
V
A
A
A
DIM ^MILLIMETERS
MIN MAX
A 14.68 15.32
B
9.78 10.42
C
6.02 6.52
D 13.06 14.62
E
3.57 4.07
F
4.84 5.32
G 1.12 1.36
H
0.72 0.96
I
4.22 4.98
J
1.14 1.38
K
2.20 2.98
L
0.33 0.55
M 2.48 2.98
O 3.70 3.90
Unit
V
mA
Common Cathode
Suffix “C”