S16C70CE Datasheet, PDF (1/2 Pages) Mospec Semiconductor – Schottky Barrier Power Rectifiers

MOSPEC
S16C70CE Thru S16C100CE
Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
* Low Forward Voltage.
* Low Switching noise.
* High Current Capacity
* Guarantee Reverse Avalanche.
* Guard-Ring for Stress Protection.
* Low Power Loss & High efficiency.
* 150 Operating Junction Temperature
* Low Stored Charge Majority Carrier Conduction.
* Plastic Material used Carries Underwriters Laboratory
SCHOTTKY BARRIER
RECTIFIERS
16 AMPERES
70-100 VOLTS
TO-220AB
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
70CE
V_RRM
V_RWM
70
V_R
S16C
80CE 90CE 100CE
80
90
100
Unit
V
RMS Reverse Voltage
V_R(RMS)
49
56
63
70
V
Average Rectifier Forward Current
Total Device (Rated V_R),T_C=100
I_F(AV)
8.0
16
A
Peak Repetitive Forward Current
(Rate V_R, Square Wave, 20kHz)
I_FM
16
A
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
I_FSM
150
A
halfware, single phase, 60Hz)
Operating and Storage Junction
Temperature Range
T_J , T_STG
-65 to +150
DIM MILLIMETERS
MIN MAX
A 14.68 15.32
B
9.78 10.42
C
5.02 6.52
D 13.06 14.62
E
3.57 4.07
F
2.42 2.66
G 1.12 1.36
H
0.72 0.96
I
4.22 4.98
J
1.14 1.38
K
2.20 2.98
L
0.33 0.55
M 2.48 2.98
O 3.70 3.90
ELECTRIAL CHARACTERISTICS
Characteristic
S16C
Symbol
Unit
70CE 80CE 90CE 100CE
Maximum Instantaneous Forward Voltage
( I_F =8 Amp T_C = 25 )
( I_F =8 Amp T_C = 125 )
V_F
0.75
0.68
0.80
V
0.73
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T_C = 25 )
I_R
( Rated DC Voltage, T_C = 125 )
0.5
mA
20
Common Cathode
Suffix “C”