S16A30 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – Schottky Barrier Rectifiers

MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
Low Forward Voltage.
Low Switching noise.
High Current Capacity
Guarantee Reverse Avalanche.
Guard-Ring for Stress Protection.
Low Power Loss & High efficiency.
150 Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction.
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
S16A30 thru S16A60
SCHOTTKY BARRIER
RECTIFIERS
16 AMPERES
30-60 VOLTS
TO-220A
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
S16A
Symbol
Unit
30 35 40 45 50 60
V_RRM
V_RWM 30 35 40 45 50 60
V
V_R
V_R(RMS) 21 25 28 32 35 42
V
Average Rectifier Forward Current
I_F(AV)
16
A
Peak Repetitive Forward Current
(Rate V_R, Square Wave, 20kHz)
I_FM
16
A
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
I_FSM
250
A
halfware, single phase, 60Hz)
Operating and Storage Junction
Temperature Range
T_J , T_stg
-65 to +150
ELECTRIAL CHARACTERISTICS
Characteristic
S16A
Symbol
Unit
30 35 40 45 50 60
Maximum Instantaneous Forward Voltage
( I_F =16 Amp T_C = 25 )
V_F
( I_F =16 Amp T_C = 125 )
0.57
0.49
0.70
V
0.58
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T_C = 25 )
I_R
( Rated DC Voltage, T_C = 125 )
1.0
mA
30
DIM ^MILLIMETERS
MIN MAX
A 14.68 15.32
B
9.78 10.42
C 6.02 6.52
D 13.06 14.62
E
3.57 4.07
F
4.84 5.32
G
1.12 1.36
H 0.72 0.96
I
4.22 4.98
J
1.14 1.38
K
2.20 2.98
L
0.33 0.55
M 2.48 2.98
N
---- 1.00
O
3.70 3.90