S10M60C Datasheet, PDF (1/2 Pages) Mospec Semiconductor – Switchmode Schottky Barrier Power Rectifiers

MOSPEC
Switchmode Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with high temperature operation metal.
The properitary barrier technology allows for reliable operation up to 150℃
junction temperature. Typical application are in switching Mode Power
Supplies such as adaptators, Photovoltaic Solar cell protection,free-
wheeling and polarity protection diodes.
Features
＊Ultra Low Forward Voltage.
＊Low Switching noise.
＊High Current Capacity
＊Low Power Loss & High efficiency.
＊150℃ Operating Junction Temperature
＊Low Stored Charge Majority Carrier Conduction.
＊Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
＊In compliance with EU RoHs 2002/95/EC directives
＊Mounting Torqure: 5 in-lbs.Max.
S10M60C
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES
60 VOLTS
TO-220AB
MAXIMUM RATINGS
Characteristic
Symbol
S10M60C
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V_RWM
60
V
V_R
RMS Reverse Voltage
V_R(RMS)
42
V
Average Rectifier Forward Current ( per diode )
Total Device (Rated V_R),
I_F(AV)
5
10
A
Non-Repetitive Peak Surge Current (Surge applied at
rate load conditions halfware, single phase, 60Hz)
I_FSM
150
A
Operating and Storage Junction Temperature Range
T_J , T_stg
-65 to +150
℃
THERMAL RESISTANCES
Typical Thermal Resistance junction to body
R_{θ j-c}
10
℃/w
DIM ^MILLIMETERS
MIN MAX
A 14.68 15.32
B 9.78 10.42
C 5.02 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 2.66
G 1.12 1.36
H 0.72 0.96
I
4.22 4.98
J 1.14 1.38
K 2.20 2.98
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
( I_F =0.1 Amp T_C = 25℃)
( I_F =3.0 Amp T_C = 25℃)
( I_F =5.0 Amp T_C = 25℃)
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T_C = 25℃)
( Rated DC Voltage, T_C = 125℃)
Symbol
S10M60C
Unit
Min Typ. Max.
V_F
--- 0.26 0.28
V
--- 0.46 0.48
--- 0.54 0.56
I_R
--- 0.05 0.1 _mA
--- 10 12