S08A150 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – Low Forward Voltage

MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Refractory metal capable of high
temperature operation metal. The proprietary barrier technology allows for
reliable operation up to 150 junction temperature. Typical application are in
switching Mode Power Supplies such as adaptators, DC/DC converters, free-
wheeling and polarity protection diodes.
Features
Low Forward Voltage.
Low Switching noise.
High Current Capacity
Guarantee Reverse Avalanche.
Guard-Ring for Stress Protection.
Low Power Loss & High efficiency.
150 Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction.
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
In compliance with EU RoHs 2002/95/EC directives
MAXIMUM RATINGS
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current
Total Device (Rated V_R), T_C=125
Peak Repetitive Forward Current
(Rate V_R, Square Wave, 20kHz)
Non-Repetitive Peak Surge Current (Surge
applied at rate load conditions halfware, single
phase, 60Hz)
Operating and Storage Junction Temperature
Range
V_RRM
V_RWM
V_R
V_R(RMS)
I_F(AV)
I_FM
I_FSM
T_J , T_stg
THERMAL RESISTANCES
Typical Thermal Resistance junction to case
R_{θ j-c}
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
( I_F =8 Amp T_C = 25 )
( I_F =8 Amp T_C = 125 )
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T_C = 25 )
( Rated DC Voltage, T_C = 125 )
Symbol
V_F
I_R
S08A150
150
105
8
16
150
-65 to +150
4.0
S08A150
0.95
0.85
0.2
20
S08A150
SCHOTTKY BARRIER
RECTIFIERS
8 AMPERES
150 VOLTS
TO-220A
Unit
V
V
A
A
A
/w
DIM ^MILLIMETERS
MIN MAX
A 14.68 15.32
B
9.78 10.42
C 6.02 6.52
D 13.06 14.62
E
3.57 4.07
F
4.84 5.32
G
1.12 1.36
H 0.72 0.96
I
4.22 4.98
J
1.14 1.38
K
2.20 2.98
L
0.33 0.55
M 2.48 2.98
N
---- 1.00
O
3.70 3.90
Unit
V
mA