MBRF1030C Datasheet, PDF (1/2 Pages) Mospec Semiconductor – Full Plastic Dual Schottky Barrier Power Rectifiers

MOSPEC
MBRF1030C Thru MBRF1060C
Switchmode
Full Plastic Dual Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These
state-of-the-art geometry features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes.
Features
* Low Forward Voltage.
* Low Switching noise.
* High Current Capacity
* Guarantee Reverse Avalanche.
* Guard-Ring for Stress Protection.
* Low Power Loss & High efficiency.
* 175℃ Operating Junction Temperature
* Low Stored Charge Majority Carrier Conduction.
* Plastic Material used Carries Underwriters Laboratory
Mecnanical Data
＊Case :JEDEC ITO-220AB molded plastic body
＊Termals:Plated lead,solderable per MIL-STD-750, Method 2026
＊Polarity:As marked
＊Mounting Torqure: 5 in-lbs. max
＊Weight:1.7 g approx.
＊High temperature soldering guaranteed 260℃/10 seconds
＊In compliance with EU RoHs 2002/95/EC directives
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES
30-60 VOLTS
ITO-220AB
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current
Total Device (Rated V_R),T_C=100℃
Peak Repetitive Forward Current
(Rate V_R, Square Wave, 20kHz)
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
halfware, single phase, 60Hz)
Operating and Storage Junction
Temperature Range
MBRF10
Symbol
30C 35C 40C 45C 50C 60C
V_RRM
V_RWM 30 35 40 45 50 60
V_R
V_R(RMS) 21 25 28 32 35 42
I_F(AV)
5.0
10
I_FM
10
I_FSM
100
T_J , T_STG
-65 to +175
Unit
V
V
A
A
A
℃
ELECTRIAL CHARACTERISTICS
Characteristic
MBRF10
Symbol
Unit
30C 35C 40C 45C 50C 60C
Maximum Instantaneous Forward Voltage
( I_F =5 Amp T_C = 25℃)
V_F
( I_F =5 Amp T_C = 125℃)
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T_C = 25℃)
I_R
( Rated DC Voltage, T_C = 125℃)
0.65
0.56
0.01
20
0.75
V
0.65
mA
Typical Thermal Resistance junction to
case
R_{θ jc}
2.8
℃/w
DIM ^MILLIMETERS
MIN MAX
A 14.90 15.15
B 13.35 13.55
C 10.00 10.10
D
6.55 6.65
E
2.65 2.75
F
1.55 1.65
G 1.15 1.25
H
0.55 0.65
I
2.50 2.60
J
3.00 3.20
K
1.10 1.20
L
0.55 0.65
M 4.40 4.60
N
1.15 1.25
O 3.35 3.45
P
2.65 2.75
Q 3.15 3.25