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MBR20150CK Datasheet, PDF (1/2 Pages) Mospec Semiconductor – Schottky Barrier Rectifiers
MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Refractory metal capable of high
temperature operation metal. The proprietary barrier technology allows for
reliable operation up to 175℃ junction temperature. Typical application are in
switching Mode Power Supplies such as adaptors, DC/DC converters, free-
wheeling and polarity protection diodes.
Features
*Low Forward Voltage.
*Low Switching noise.
*High Current Capacity
*Guarantee Reverse Avalanche.
*Guard-Ring for Stress Protection.
*Low Power Loss & High efficiency.
*175℃ Operating Junction Temperature
*Low Stored Charge Majority Carrier Conduction.
*Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
MBR20150CK
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
150 VOLTS
TO-220AB
*In compliance with EU RoHs 2002/95/EC directives
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current ( per diode )
Total Device (Rated VR), TC=125℃
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
Non-Repetitive Peak Surge Current (Surge applied at
rate load conditions halfware, single phase, 60Hz)
Symbol
VRRM
VRWM
VR
VR(RMS)
IF(AV)
IFM
IFSM
Operating and Storage Junction Temperature Range
TJ , Tstg
MBR20150CK Unit
150
V
105
V
10
20
A
20
A
150
A
-65 to +175
℃
THERMAL RESISTANCES
Typical Thermal Resistance junction to case
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
( IF =10 Amp TC = 25℃)
( IF =10 Amp TC = 125℃)
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
( Rated DC Voltage, TC = 125℃)
Rθjc
3.6
℃/w
Symbol
VF
IR
MBR20150CK Unit
0.95
V
0.85
0.01
mA
10
DIM MILLIMETERS
MIN MAX
A 14.68 15.32
B
9.78 10.42
C 5.02 6.52
D 13.06 14.62
E
3.57 4.07
F
2.42 2.66
G
1.12 1.36
H 0.72 0.96
I
4.22 4.98
J
1.14 1.38
K
2.20 2.98
L
0.33 0.55
M 2.48 2.98
O
3.70 3.90