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MBR10150CK Datasheet, PDF (1/2 Pages) Mospec Semiconductor – Schottky Barrier Rectifiers | |||
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MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Refractory metal capable of high
temperature operation metal. The proprietary barrier technology allows for
reliable operation up to 175â junction temperature. Typical application are in
switching Mode Power Supplies such as adaptors, DC/DC converters, free-
wheeling and polarity protection diodes.
Features
ï¼Low Forward Voltage.
ï¼Low Switching noise.
ï¼High Current Capacity
ï¼Guarantee Reverse Avalanche.
ï¼Guard-Ring for Stress Protection.
ï¼Low Power Loss & High efficiency.
ï¼175â Operating Junction Temperature
ï¼Low Stored Charge Majority Carrier Conduction.
ï¼Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
MBR10150CK
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES
150 VOLTS
TO-220AB
ï¼In compliance with EU RoHs 2002/95/EC directives
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRRM
VRWM
VR
MBR10150CK
150
Unit
V
RMS Reverse Voltage
VR(RMS)
105
V
Average Rectifier Forward Current
Total Device (Rated VR), TC=125â
(per diode)
IF(AV)
5.0
10
A
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
IFM
10
A
Non-Repetitive Peak Surge Current (Surge applied at
rate load conditions halfware, single phase, 60Hz)
IFSM
125
A
Operating and Storage Junction Temperature Range
TJ , Tstg
-65 to +175
â
THERMAL RESISTANCES
Typical Thermal Resistance junction to case
Rθjc
4.0
â/w
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
( IF =5.0 Amp TC = 25â)
( IF =5.0 Amp TC = 125â)
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25â)
( Rated DC Voltage, TC = 125â)
Symbol MBR10150CK Unit
VF
0.95
V
0.85
IR
0.01
mA
10
DIM MILLIMETERS
MIN MAX
A 14.68 15.32
B
9.78 10.42
C 5.02 6.52
D 13.06 14.62
E
3.57 4.07
F
2.42 2.66
G
1.12 1.36
H 0.72 0.96
I
4.22 4.98
J
1.14 1.38
K
2.20 2.98
L
0.33 0.55
M 2.48 2.98
O
3.70 3.90
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