MBR10120CT Datasheet, PDF (1/2 Pages) Mospec Semiconductor – Schottky Barrier Rectifiers

MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Refractory metal capable of high
temperature operation metal. The proprietary barrier technology allows for
reliable operation up to 175 junction temperature. Typical application are in
switching Mode Power Supplies such as adaptors, DC/DC converters, free-
wheeling and polarity protection diodes.
Features
Low Forward Voltage.
Low Switching noise.
High Current Capacity
Guarantee Reverse Avalanche.
Guard-Ring for Stress Protection.
Low Power Loss & High efficiency.
175 Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction.
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
MBR10120CT
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES
120 VOLTS
TO-220AB
In compliance with EU RoHs 2002/95/EC directives
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current ( per diode )
Total Device (Rated V_R), T_C=125
Peak Repetitive Forward Current
(Rate V_R, Square Wave, 20kHz)
Non-Repetitive Peak Surge Current (Surge applied at
rate load conditions halfware, single phase, 60Hz)
Symbol
V_RRM
V_RWM
V_R
V_R(RMS)
I_F(AV)
I_FM
I_FSM
Operating and Storage Junction Temperature Range
T_J , T_stg
MBR10120CT Unit
120
V
84
V
5
10
A
20
A
125
A
-65 to +175
THERMAL RESISTANCES
Typical Thermal Resistance junction to case
R_θjc
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage ( per diode )
( I_F =5 Amp T_C = 25 )
( I_F =5 Amp T_C = 125 )
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T_C = 25 )
( Rated DC Voltage, T_C = 125 )
Symbol
V_F
I_R
3.4
/w
MBR10120CT Unit
0.85
V
0.76
0.01
mA
10
DIM ^MILLIMETERS
MIN MAX
A 14.68 15.32
B
9.78 10.42
C 5.02 6.52
D 13.06 14.62
E
3.57 4.07
F
2.42 2.66
G 1.12 1.36
H 0.72 0.96
I
4.22 4.98
J
1.14 1.38
K
2.20 2.98
L
0.33 0.55
M 2.48 2.98
O 3.70 3.90