MBR05A100K Datasheet, PDF (1/2 Pages) Mospec Semiconductor – Schottky Barrier Rectifiers

MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Refractory metal capable of high
temperature operation metal. The proprietary barrier technology allows for
reliable operation up to 175℃ junction temperature. Typical application are in
switching Mode Power Supplies such as adaptors, DC/DC converters, free-
wheeling and polarity protection diodes.
Features
＊Low Forward Voltage.
＊Low Switching noise.
＊High Current Capacity
＊Guarantee Reverse Avalanche.
＊Guard-Ring for Stress Protection.
＊Low Power Loss & High efficiency.
＊175℃ Operating Junction Temperature
＊Low Stored Charge Majority Carrier Conduction.
＊Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
＊In compliance with EU RoHs 2002/95/EC directives
MBR05A100K
SCHOTTKY BARRIER
RECTIFIERS
5 AMPERES
100 VOLTS
TO-220A
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current
Peak Repetitive Forward Current
(Rate V_R, Square Wave, 20kHz)
Non-Repetitive Peak Surge Current (Surge applied at
rate load conditions halfware, single phase, 60Hz)
Operating and Storage Junction Temperature Range
Symbol
V_RRM
V_RWM
V_R
V_R(RMS)
I_F(AV)
I_FM
I_FSM
T_J , T_stg
THERMAL RESISTANCES
Typical Thermal Resistance junction to case
R_θjc
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
( I_F =5.0 Amp T_C = 25℃)
( I_F =5.0 Amp T_C = 125℃)
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T_C = 25℃)
( Rated DC Voltage, T_C = 125℃)
Symbol
V_F
I_R
MBR05A100K Unit
100
V
70
V
5.0
A
10
A
125
A
-65 to +175
℃
3.8
℃/w
MBR05A100K Unit
0.85
V
0.78
0.01
mA
10
DIM ^MILLIMETERS
MIN MAX
A 14.68 15.32
B
9.78 10.42
C 6.02 6.52
D 13.06 14.62
E
3.57 4.07
F
4.84 5.32
G
1.12 1.36
H 0.72 0.96
I
4.22 4.98
J
1.14 1.38
K
2.20 2.98
L
0.33 0.55
M 2.48 2.98
N
---- 1.00
O
3.70 3.90