F10C30 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – High Surge Capacity

MOSPEC
Switchmode
Dual Ultrafast Power Rectifiers
-- Designed for use in switching power supplies inverters and as free
wheeling diodes. These state-of-the-art devices have the following
features:
High Surge Capacity
Low Power Loss, High efficiency
Glass Passivated chip junctions
150 ^OC Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction
Low Forward Voltage, High Current Capability
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
In compliance with EU RoHs 2002/95/EC directives
F10C30 thru F10C60
FAST RECOVERY
RECTIFIERS
10 AMPERES
300-600 VOLTS
TO-220AB
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol F10C30 F10C40 F10C50 F10C60 Unit
V_RRM
V_RWM
300
400
500
600
V
V_R
RMS Reverse Voltage
V_R(RMS) 210
280
350
420
V
Average Rectifier Forward Current
Total Device (Rated V_R), T_C=100
I_F(AV)
5.0
10
A
Peak Repetitive Forward Current
(Rate V_R, Square Wave, 20kHz)
I_FM
10
A
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
I_FSM
80
A
halfware, single phase, 60Hz)
Operating and Storage Junction
Temperature Range
T_J , T_stg
-65 to +150
ELECTRIAL CHARACTERISTICS
Characteristic
Symbol F10C30 F10C40 F10C50 F10C60 Unit
Maximum Instantaneous Forward Voltage
( I_F =5.0 Amp T_C = 25 )
V_F
( I_F =5.0 Amp T_C = 125 )
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T_C = 25 )
I_R
( Rated DC Voltage, T_C = 125 )
1.30
V
1.16
5.0
uA
200
Reverse Recovery Time
( I_F = 0.5 A, I_R =1.0 , I_rr =0.25 A )
T_rr
250
ns
Typical Junction Capacitance
(Reverse Voltage of 4 volts & f=1 MHz)
C_P
70
P^F
DIM ^MILLIMETERS
MIN MAX
A 14.68 15.32
B
9.78 10.42
C 6.02 6.52
D 13.06 14.62
E
3.57 4.07
F
2.42 2.66
G
1.12 1.36
H 0.72 0.96
I
4.22 4.98
J
1.14 1.38
K
2.20 2.98
L
0.33 0.55
M 2.48 2.98
O
3.70 3.90