F10C05 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – Glass Passivated chip junctions

MOSPEC
F10C05 Thru F10C20
Switchmode
Dual Fast Recovery Power Rectifiers
Designed for use in switching power supplies. inverters and as free
wheeling diodes. These state-of-the-art devices have the following features:
Glass Passivated chip junctions
Low Reverse Leakage Current
Fast Switching for High Efficiency
150 Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction
Low Forward Voltage , High Current Capability
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
In compliance with EU RoHs 2002/95/EC directives
MAXIMUM RATINGS
Characteristic
Symbol
05
F10C
10
15
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V_RWM
50
V_R
100
150
RMS Reverse Voltage
V_R(RMS)
35
Average Rectifier Forward Current
Per Leg
T_C=125
Per Total Device
Peak Repetitive Forward Current
(Rate V_R, Square Wave, 20kHz)
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
halfware, single phase, 60Hz)
I_F(AV)
I_FM
I_FSM
Operating and Storage Junction
Temperature Range
T_J , T_stg
70
105
5.0
10
10
100
-65 to +125
Unit
20
200
V
140
V
A
A
A
ELECTRIAL CHARACTERISTICS
Characteristic
Symbol
05
Maximum Instantaneous Forward Voltage
( I_F =5 Amp T_C = 25 )
V_F
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T_C = 25 )
I_R
( Rated DC Voltage, T_C = 125 )
Reverse Recovery Time
( I_F = 0.5 A, I_R =1.0 , I_rr =0.25 A )
T_rr
Typical Junction Capacitance
(Reverse Voltage of 4 volts & f=1 MHz)
C_P
F10C
10
15
1.30
5.0
100
150
55
Unit
20
V
uA
ns
P^F
FAST RECOVERY
RECTIFIERS
10 AMPERES
50-200 VOLTS
TO-220AB
DIM ^MILLIMETERS
MIN MAX
A 14.68 15.32
B
9.78 10.42
C 5.02 6.52
D 13.06 14.62
E
3.57 4.07
F
2.42 2.66
G
1.12 1.36
H 0.72 0.96
I
4.22 4.98
J
1.14 1.38
K
2.20 2.98
L
0.33 0.55
M 2.48 2.98
O
3.70 3.90