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1N5820 Datasheet, PDF (1/2 Pages) Motorola, Inc – SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
MOSPEC
1N5820M Thru 1N5822M
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
Features
*Low Forward Voltage.
*Low Switching noise.
*High Current Capacity
*Guarantee Reverse Avalanche.
*Guard-Ring for Stress Protection.
*Low Power Loss & High efficiency.
*150℃ Operating Junction Temperature
*Low Stored Charge Majority Carrier Conduction.
*Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
*ESD: 8KV(Min.) Human-Body Model
* In compliance with EU RoHs 2002/95/EC directives
The marking is indicated by part no. with.“M” ex:1N5820M~1N5822M
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
half-wave, single phase,60Hz )
Symbol 1N5820M 1N5821M 1N5822M Unit
VRRM
VRWM
20
30
40
V
VR
VR(RMS)
14
21
28
V
IO
3.0
A
IFSM
80
A
Operating and Storage Junction
Temperature Range
TJ , TSTG
-65 to +150
℃
ELECTRIAL CHARACTERISTICS
Characteristic
Symbol 1N5820M 1N5821M 1N5822M Unit
Maximum Instantaneous Forward Voltage
(IF =3.0 Amp)
VF
0.475
0.550
V
(IF =9.0 Amp)
0.850
0.970
Maximum Instantaneous Reverse Current
(Rated DC Voltage, TC = 25℃)
IR
(Rated DC Voltage, TC = 125℃)
0.5
mA
20
Typical Thermal Resistance junction to case Rθ j-c
40
℃/w
Typical Junction Capacitance
(Reverse Voltage of 4 volts & f=1 MHz)
CP
210
190
pF
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20-40 VOLTS
DO-201AD
MILLIMETERS
DIM
MIN MAX
A
5.00 5.60
B 25.40
---
C
7.20 9.50
D
1 20 1 30
CASE---
Transfer molded
plastic
POLARITY---
Cathode indicated
polarity band