1N5817 Datasheet, PDF (1/2 Pages) Motorola, Inc – SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 20, 30 and 40 VOLTS

MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
Low Forward Voltage.
Low Switching noise.
High Current Capacity
Guarantee Reverse Avalanche.
Guard-Ring for Stress Protection.
Low Power Loss & High efficiency.
150 Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction.
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
ESD: 8KV(Min.) Human-Body Model
In compliance with EU RoHs 2002/95/EC directives
1N5817 thru 1N5819
SCHOTTKY BARRIER
RECTIFIERS
1.0 AMPERES
20-40 VOLTS
DO-41
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
half-wave, single phase,60Hz )
Operating and Storage Junction
Temperature Range
Symbol 1N5817 1N5818 1N5819
V_RRM
V_RWM
20
30
40
V_R
Unit
V
VR_(RMS)
14
21
28
V
I_O
1.0
A
I_FSM
25
A
T_J , T_STG
-65 to +150
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
(I_F =1.0 Amp)
(I_F =3.0 Amp)
Maximum Instantaneous Reverse Current
(Rated DC Voltage, T_C = 25 )
(Rated DC Voltage, T_C = 125 )
Maximum Thermal Resistance Junction to
Case
Typical Junction Capacitance
(Reverse Voltage of 4 volts & f=1 MHz)
Symbol 1N5817 1N5818 1N5819 Unit
V_F
0.45
0.55
0.60
V
0.75
0.87
0.90
I_R
0.5
mA
10
R_θJC
60
o_C/W
C_P
90
80
pF
MILLIMETERS
DIM
MIN MAX
A
2.00 2.70
B 25.40
---
C
4.10 5.20
D
0.70 0.90
CASE---
Transfer molded
plastic
OLARITY---
Cathode indicated
polarity band