V53C1664H Datasheet, PDF (6/18 Pages) Mosel Vitelic, Corp – HIGH PERFORMANCE 64K X 16 BIT FAST PAGE MODE DUAL CAS CMOS DYNAMIC RAM

MOSEL VITELIC
V53C1664H
AC Characteristics (Cont’d)
30
35
40
45
50
Symbol Parameter
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit Notes
t_WP
Write Pulse Width
5
5
5
6
7
ns
t_WCR
Write Command Hold Time
26
28
30
35
40
ns
from RAS
t_RWL
Write Command to RAS
Lead Time
10
11
12
13
14
ns
t_DS
Data in Setup Time
0
0
0
0
0
ns 14
t_DH
Data in Hold Time
5
5
5
6
7
ns 14
t_WOH
Write to OE Hold Time
5
5
6
7
8
ns 14
t_OED
OE to Data Delay Time
5
5
6
7
8
ns 14
t_RWC
Read-Modify-Write Cycle Time
100
105
110
115
130
ns
t_RRW
Read-Modify-Write Cycle
RAS Pulse Width
65
70
75
80
87
ns
t_CWD
t_RWD
CAS to WE Delay
RAS to WE Delay in Read-
Modify-Write Cycle
26
28
30
32
34
ns 12
50
54
58
62
68
ns 12
t_CRW
t_AWD
t_PC
CAS Pulse Width (RMW)
Col. Address to WE Delay
Fast Page Mode Read
or Write Cycle Time
44
46
48
50
52
ns
32
35
38
41
42
ns 12
19
21
23
25
28
ns
t_CP
CAS Precharge Time
t_CAR
Column Address to RAS
Setup Time
3
4
5
6
7
ns
16
18
20
22
24
ns
t_CAP
Access Time from Column
Precharge
19
21
23
25
27 ns 7
t_DHR
Data in Hold Time Referenced
26
28
30
35
40
ns
to RAS
t_CSR
CAS Setup Time CAS- before-RAS 10
10
10
10
10
ns
Refresh
t_RPC
RAS to CAS Precharge Time
0
0
0
0
0
ns
t_CHR
CAS Hold Time CAS-before-
7
8
8
10
12
ns
RAS Refresh
t_PCM
Fast Page Mode Read-Modify-Write 56
58
60
65
70
ns
Cycle Time
t_T
Transition Time (Rise and Fall)
t_REF
Refresh Interval (256 Cycles)
1.5 50 1.5 50 1.5 50 1.5 50 1.5 50 ns 15
4
4
4
4
4 ms 17
Notes:
1. I_CC is dependent on output loading when the device output is selected. Specified I_CC (max.) is measured with the
output open.
V53C1664H Rev. 1.0 February 1998
6