V53C818H Datasheet, PDF (4/18 Pages) Mosel Vitelic, Corp – HIGH PERFORMANCE 512K X 16 EDO PAGE MODE CMOS DYNAMIC RAM

MOSEL VITELIC
V53C818H
DC and Operating Characteristics (1-2)
T_A = 0°C to 70°C, V_CC = 5 V ± 10%, V_SS = 0 V, unless otherwise specified.
Symbol
Parameter
Access
V53C818H
Time Min. Typ. Max. Unit
Test Conditions
I_LI
Input Leakage Current
(any input pin)
–10
10
µA V_SS ≤ V_IN ≤ V_CC
I_LO
Output Leakage Current
(for High-Z State)
I_CC1
V_CC Supply Current,
Operating
–10
30
35
10
µA V_SS≤ V_OUT ≤ V_CC
RAS, CAS at V_IH
240
mA t_RC = t_RC (min.)
230
40
220
45
210
50
200
I_CC2
V_CC Supply Current,
TTL Standby
I_CC3
V_CC Supply Current,
30
RAS-Only Refresh
35
4
mA RAS, CAS at V_IH
other inputs ≥ V_SS
240
mA t_RC = t_RC (min.)
230
40
220
45
210
50
200
I_CC4
V_CC Supply Current,
30
EDO Page Mode Operation
35
230
mA Minimum Cycle
220
40
210
45
200
50
190
I_CC5
V_CC Supply Current,
Standby, Output Enabled
other inputs ≥ V_SS
I_CC6
V_CC Supply Current,
CMOS Standby
V_CC
Supply Voltage
V_IL
Input Low Voltage
V_IH
Input High Voltage
V_OL
Output Low Voltage
V_OH
Output High Voltage
2
mA RAS = V_IH, CAS = V_IL
2
mA RAS ≥ V_CC – 0.2 V,
CAS ≥ V_CC– 0.2 V,
All other inputs ≥ V_SS
4.5
5.0
5.5
V
–1
0.8
V
2.4
V_CC + 1 V
0.4
V I_OL = 4.2 mA
2.4
V I_OH = –5.0 mA
Notes
1, 2
2
1, 2
1
3
3
V53C818H Rev. 1.2 May 1997
4