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V62C1801024L Datasheet, PDF (1/10 Pages) Mosel Vitelic, Corp – Ultra Low Power 128K x 8 CMOS SRAM
V62C1801024L(L)
Ultra Low Power
128K x 8 CMOS SRAM
Features
• Ultra Low-power consumption
- Active: 20mA at 70ns
- Stand-by: 5 µA (CMOS input/output)
1 µA CMOS input/output, L version
• Single +1.8V to 2.2V Power Supply
• Equal access and cycle time
• 70/85/100/150 ns access time
• Easy memory expansion with CE1 , CE2
and OE inputs
• 1.0V data retention mode
• TTL compatible, Tri-state input/output
• Automatic power-down when deselected
Functional Description
The V62C1801024L is a low power CMOS Static RAM or-
ganized as 131,072 words by 8 bits. Easy memory expansion
is provided by an active LOW CE1 , an active HIGH CE2, an
active LOW OE, and Tri-state I/O’s. This device has an a-
utomatic power-down mode feature when deselected.
Writing to the device is accomplished by taking Chip E-
nable 1 (CE1 ) with Write Enable (WE) LOW, and Chip Ena-
ble 2 (CE2) HIGH. Reading from the device is performed by
taking Chip Enable 1 (CE1) with Output Enable (OE)
LOW while Write Enable (WE ) and Chip Enable 2 (CE2)
is HIGH. The I/O pins are placed in a high-impedance st-
ate when the device is deselected: the outputs are disabled
during a write cycle.
The V62C1801024LL comes with a 1V data retention feature
and Lower Standby Power. The V62C1801024L is available in
a 32-pin 8 x 20 mm TSOP1 / STSOP / 48-fpBGA packages.
Logic Block Diagram
32-Pin TSOP1 / STSOP (See next page)
INPUT BUFFFEERR
A0
AAA211
AA32
AA43
11002244
AA54
AA65
10XX24
AA76
1024
A8
AA97
A8
COLUMN DECODER
COLUMN DECODER
A10 A11 A12 A13 A14 A15 A16
A9 A10 A11 A12 A13 A14 A15 A16
II//OO87
I/O1
I/O0
OE
CONTROL WE
CCOIRNCTURIOTL
OCEE1
WCEE2
CIRCUIT CE1
CE2
A11
1
A9
2
A8
3
A13
4
WE
5
CE2
6
A15
7
Vcc
8
NC
9
A16
10
A14
11
A12
12
A7
13
A6
14
A5
15
A4
16
1
REV. 1.1 April 2001 V62C1801024L(L)
32
OE
31
A10
30
CE1
29
I/O8
28
I/O7
27
I/O6
26
I/O5
25
I/O4
24
GND
23
I/O3
22
I/O2
21
I/O1
20
A0
19
A1
18
A2
17
A3