V53C8129H Datasheet, PDF (1/18 Pages) Mosel Vitelic, Corp – ULTRA-HIGH PERFORMANCE, 128K X 8EDO PAGE MODE CMOS DYNAMIC RAM

MOSEL VITELIC
V53C8129H
ULTRA-HIGH PERFORMANCE,
128K X 8 EDO PAGE MODE
CMOS DYNAMIC RAM
PRELIMINARY
HIGH PERFORMANCE
Max. RAS Access Time, (t_RAC)
Max. Column Address Access Time, (t_CAA)
Min. Fast Page Mode With EDO Cycle Time, (t_PC)
Min. Read/Write Cycle Time, (t_RC)
35
35 ns
18 ns
14 ns
70 ns
40
40 ns
20 ns
15 ns
75 ns
45
45 ns
22 ns
17 ns
80 ns
50
50 ns
24 ns
19 ns
90 ns
Features
s 128K x 8-bit organization
s RAS access time: 35, 40, 45, 50 ns
s EDO Page Mode supports sustained I/O data
rates up to 71.5 MHz
s Low power dissipation
• V53C8129H-50
— Operating Current: 135 mA max
— TTL Standby Current: 2.0 mA max
s Low CMOS Standby Current: 1.0 mA max
s Read-Modify-Write, RAS-Only Refresh,
CAS-Before-RAS Refresh capability
s Refresh Interval: 512 cycles/8 ms
s Available in 26/24 pin 300 mil SOJ package
Description
The V53C8129H is a high speed 131,072 x 8 bit
CMOS dynamic random access memory. The
V53C8129H offers a combination of features: EDO
Page Mode for high data bandwidth, fast usable
speed, CMOS standby current.
All inputs and outputs are TTL compatible. Input
and output capacitances are significantly lowered to
allow increased system performance. Page Mode
with extended data out operation allows random ac-
cess of up to 256 columns (x8) bits within a row with
cycle times as short as 14 ns. Because of static cir-
cuitry, the CAS clock is not in the critical timing path.
The flow-through column address latches allow ad-
dress pipelining while relaxing many critical system
timing requirements for fast usable speed. These
features make the V53C8129H ideally suited for
graphics, digital signal processing and high perfor-
mance peripherals.
Device Usage Chart
Operating
Temperature
Range
0°C to 70 °C
Package Outline
K
•
Access Time (ns)
35
40
45
50
•
•
•
•
V53C8129H Rev. 1.3 July 1997
1
Power
Std.
•
Temperature
Mark
Blank