English
Language : 

V53C518165A Datasheet, PDF (1/28 Pages) Mosel Vitelic, Corp – 1M x 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
MOSEL VITELIC
V53C518165A
1M x 16 EDO PAGE MODE
CMOS DYNAMIC RAM
OPTIONAL SELF REFRESH
HIGH PERFORMANCE
Max. RAS Access Time, (tRAC)
Max. Column Address Access Time, (tCAA)
Min. Extended Data Out Page Mode Cycle Time, (tPC)
Min. Read/Write Cycle Time, (tRC)
Features
s 1MB x 16-bit organization
s EDO Page Mode for a sustained data rate
of 50 MHz
s RAS access time: 50, 60 ns
s Dual CAS Inputs
s Low power dissipation
s Read-Modify-Write, RAS-Only Refresh,
CAS-Before-RAS Refresh
• Refresh Interval: 1024 cycles/16 ms
s Available in 42-pin 400 mil SOJ and
44/50-pin 400 mil TSOP-II Packages
s Single 5V ±10% Power Supply
s TTL Interface
s Optional Self Refresh (V53C518165AS)
• Refresh Interval: 1024 cycles/128 ms
50
50 ns
25 ns
20 ns
84 ns
60
60 ns
30 ns
25 ns
104 ns
Description
The V53C518165A is a 1048576 x 16 bit high-
performance CMOS dynamic random access
memory. The V53C518165A offers Page mode op-
eration with Extended Data Output. The
V53C518165A has symmetric address, 10-bit row
and 10-bit column.
All inputs are TTL compatible. EDO Page Mode
operation allows random access up to 1024 x 16
bits, within a page, with cycle times as short as
20ns.
These features make the V53C518165A ideally
suited for a wide variety of high performance com-
puter systems and peripheral applications.
Device Usage Chart
Operating
Temperature
Range
0°C to 70°C
–40°C to +85°C
Package Outline
K
T
•
•
•
•
V53C518165A Rev. 1.1 January 1998
Access Time (ns)
50
60
•
•
•
•
1
Power
Std.
•
•
Temperature
Mark
Blank
I