SYS88000RKX-70 Datasheet, PDF (1/7 Pages) MOSAIC – 8M x 8 SRAM MODULE

8M x 8 SRAM MODULE
SYS88000RKX - 70/85/10/12
Issue 1.5: April 2001
Description
The SYS88000RKX is a plastic 64Mbit Static RAM
Module housed in a standard 38 pin Single In-Line
package organised as 8M x 8 with access times of
85,100, or 120 ns.
The module is constructed using sixteen 512Kx8 SRAMs
in TSOPII packages mounted onto both sides of an FR4
epoxy substrate. This offers an extremely high PCB
packing density.
The device is offered in standard and low power versions,
with the -L module having a low voltage data retention
mode for battery backed applications. On board buffering
is provided to reduce output capacitance.
Note: CS and OE on the module, should be used
with care to avoid on and off board bus contention.
Features
• Access Times of 85/100/120 ns.
• Low Power Disapation:
Operating
935 mW (Max.)
Standby -L Version 11 mW (Max.)
• 5 Volt Supply ± 10%.
• Completely Static Operation.
• Equal Access and Cycle Times.
• Low Voltage V_CC Data Retention.
• On-board Decoding & Capacitors.
• 38 Pin Single-In-Line package.
• Upgrade from SYS84000RKX (32Mbit).
Block Diagram
OE
WE
A0 - A18
A19
A20
A21 4 TO 16
A22 DECODER
512K X 8
SRAM
512K X 8
SRAM
CS
D0 - D7
T/R
BI-DIRECTIONAL
DRIVERS _{D0 - D7}
B0~7 A0~7
74FCT245
OE
Pin Functions
Address Inputs
Data Input/Output
Chip Select
Write Enable
Output Enable
No Connect
Power (+5V)
Ground
A0 ~ A22
D0 ~ D7
CS
WE
OE
NC
V_CC
GND
Pin Definition
A22
1
A20
2
Vcc
3
WE
4
D2
5
D3
6
D0
7
A1
8
A2
9
A3
10
A4
11
GND
12
D5
13
A10
14
A11
15
A5
16
A13
17
A14
18
A19
19
CS
20
A15
21
A16
22
A12
23
A18
24
A6
25
D1
26
GND
27
A0
28
A7
29
A8
30
A9
31
D7
32
D4
33
D6
34
A17
35
Vcc
36
OE
37
A21
38
Package Details
Plastic 38 pin Single-In-Line (SIP)