SYS84000RKX-85 Datasheet, PDF (1/7 Pages) MOSAIC – 4M x 8 SRAM MODULE

4M x 8 SRAM MODULE
SYS84000RKX - 85/10/12
Issue 1.7 : April 2001
Description
The SYS84000RKX is a plastic 32Mbit Static RAM
Module housed in a standard 38 pin Single In-Line
package organised as 4M x 8 with access times of,
85,100, or 120 ns.
The module is constructed using eight 512Kx8 SRAMs
in TSOPII packages mounted onto both sides of an FR4
epoxy substrate. This offers an extremely high PCB
packing density.
The device is offered in standard and low power versions,
with the -L module having a low voltage data retention
mode for battery backed applications. Buffering is
provided on the module to reduce the output capacitance
to 8pF(Typ).
Note: CS and OE on the module, should be used
with care to avoid on and off board bus contention.
Features
• Access Times of 85/100/120 ns.
• Low Power Disipation:
Operating
770 mW (Max.)
Standby-L Version (CMOS) 4.84mW (Max.)
• 5 Volt Supply ± 10%.
• Completely Static Operation.
• Equal Access and Cycle Times.
• Low Voltage V_CC Data Retention.
• On-board Decoding & Capacitors.
• 38 Pin Single-In-Line package (SIP).
• Upgrade path to SYS88000RKX (64Mbits).
Block Diagram
OE
WE
A0 - A18
A19
Q0~3
A20 DECODER
A21
Q4~7
512K x 8
SRAM
CS ^CS
CS
CS
T/R
D0 - D7
/8
CS _CS
512K x 8
CS
CS
OE
CS
SRAM
D0 - D7
Pin Functions
Address Inputs
Data Input/Output
Chip Select
Write Enable
Output Enable
No Connect
Power (+5V)
Ground
A0 - A21
D0 - D7
CS
WE
OE
NC
V
CC
GND
Pin Definition
NC
1
A20
2
Vcc
3
WE
4
D2
5
D3
6
D0
7
A1
8
A2
9
A3
10
A4
11
GND
12
D5
13
A10
14
A11
15
A5
16
A13
17
A14
18
A19
19
CS
20
A15
21
A16
22
A12
23
A18
24
A6
25
D1
26
GND
27
A0
28
A7
29
A8
30
A9
31
D7
32
D4
33
D6
34
A17
35
Vcc
36
OE
37
A21
38
Package Details
Plastic 38 pin Single-In-Line (SIP)