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MSN6507F Datasheet, PDF (4/5 Pages) MORE Semiconductor Company Limited – 650V(D-S) N-Channel Enhancement Mode Power MOS FET
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MSN6507F
10 VDS=480V
ID=4A
8
6
4
2
0
0
3
6
9
12
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
VDD
RL
VIN
D
VOUT
VGS
RGEN G
S
Figure 9. Switching Test Circuit
102 RDS(ON)Limit
101
100ms
1ms
10ms
100
DC
TC=25 C
TJ=150 C
10-1 Single Pulse
100
101
102
103
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
td(on)
VOUT
t on
tr
td(off)
90%
10% INVERTED
toff
tf
90%
10%
VIN
10%
50%
90%
50%
PULSE WIDTH
Figure 10. Switching Waveforms
100
10-1
D=0.5
0.2
0.1
0.05
0.02
0.01
10-2 Single Pulse
10-5
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (sec)
PDM
t1
t2
1. R JC (t)=r (t) * R JC
2. R JC=See Datasheet
3. TJM-TC = P* R JC (t)
4. Duty Cycle, D=t1/t2
100
101
Figure 11. Normalized Thermal Transient Impedance Curve
MORE Semiconductor Company Limited
http://www.moresemi.com
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