MSN6010F Datasheet, PDF (3/5 Pages) MORE Semiconductor Company Limited – 600V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN6010F
Typical Electrical and Thermal Characteristics (Curves)
12
10
V_GS=10,9,8,7,6,5V
8
6
4
2
V_GS=4V
0
0
5 10 15 20
25
30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
12
10
8
6
4
25 C
2
T_J=125C
-55 C
0
0 1.5
3.0 4.5
6.0
7.5
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2400
2000
Ciss
1600
1200
800
400
0
0
Coss
Crss
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
3.0
I_D=5A
2.5 ^VGS=10V
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
1.3 _VDS=VGS
1.2 ^ID^=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
10^{1 VGS=0V}
10⁰
10^-1
0.4 0.6
0.8 1.0 1.2 1.4 1.6
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
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