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MSP3099 Datasheet, PDF (2/6 Pages) MORE Semiconductor Company Limited – -30V(D-S) P-Channel Enhancement Mode Power MOS FET
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MSP3099
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Symbol
Condition
Min Typ Max Unit
BVDSS
IDSS
IGSS
VGS=0V ID=-250μA
VDS=-24V,VGS=0V
VGS=±10V,VDS=0V
-30
-
V
-
-
-1
μA
-
-
±100
nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-10V, ID=-4.2A
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-1A
VDS=-5V,ID=-4.2A
-0.7 -1 -1.3
V
-
50
55
mΩ
-
64
75
mΩ
95 130
mΩ
-
10
-
S
Clss
- 950
-
PF
VDS=-15V,VGS=0V,
Coss
- 115
-
PF
F=1.0MHz
Crss
-
75
-
PF
td(on)
-
7
-
nS
tr
VDD=-15V,ID=-3.2A
-
3
-
nS
td(off)
VGS=-10V,RGEN=6Ω
-
30
-
nS
tf
-
12
-
nS
Qg
- 9.5
-
nC
Qgs
VDS=-15V,ID=-4A,VGS=-4.5V -
2
-
nC
Qgd
-
3
-
nC
VSD
VGS=0V,IS=-1A
-
-
-1.2
V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
MORE Semiconductor Company Limited
http://www.moresemi.com
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