MSN10B4K Datasheet, PDF (2/6 Pages) MORE Semiconductor Company Limited – 100V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN10B4K
Thermal Characteristic
Thermal Resistance,Junction-to-Case^{(Note 2)}
R_θJC
0.45
℃/W
Electrical Characteristics (T_C=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=250μA
100 110
-
V
Zero Gate Voltage Drain Current
I_DSS
V_DS=100V,V_GS=0V
-
-
1
μA
Gate-Body Leakage Current
On Characteristics ^{(Note 3)}
I_GSS
V_GS=±20V,V_DS=0V
-
-
±100
nA
Gate Threshold Voltage
V_GS(th)
V_DS=V_GS,I_D=250μA
2
3.2
4
V
Drain-Source On-State Resistance
R_DS(ON)
V_GS=10V, I_D=40A
-
4.6
5.5
mΩ
Forward Transconductance
Dynamic Characteristics ^(Note4)
g_FS
V_DS=50V,I_D=40A
170
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics ^{(Note 4)}
C_lss
- 10500
-
PF
V_DS=25V,V_GS=0V,
C_oss
-
914
-
PF
F=1.0MHz
C_rss
-
695
-
PF
Turn-on Delay Time
t_d(on)
-
25
-
nS
Turn-on Rise Time
Turn-Off Delay Time
t_r
t_d(off)
V_DD=65V,I_D=40A
-
100
-
nS
V_GS=10V,R_GEN=2.5Ω
-
65
-
nS
Turn-Off Fall Time
t_f
-
77
-
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
-
120
-
nC
V_DS=44V,I_D=40A,
Q_gs
-
30
-
nC
V_GS=10V
Q_gd
-
35
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage ^{(Note 3)}
Diode Forward Current ^{(Note 2)}
V_SD
V_GS=0V,I_S=40A
-
0.85
1.2
V
I_S
-
-
40
A
Reverse Recovery Time
Reverse Recovery Charge
t_rr
TJ = 25°C, IF = 40A
-
45
70
nS
Qrr
di/dt = 100A/μs^(Note3)
-
80
120
nC
Forward Turn-On Time
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,V_DD=50V,V_G=10V,L=1mH,Rg=25Ω
MORE Semiconductor Company Limited
http://www.moresemi.com
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