MSC8205S Datasheet, PDF (2/6 Pages) MORE Semiconductor Company Limited – 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET

MSC8205S
Electrical Characteristics (T_A=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics ^{(Note 3)}
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics ^(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics ^{(Note 4)}
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage ^{(Note 3)}
Diode Forward Current ^{(Note 2)}
Symbol
BV_DSS
I_DSS
I_GSS
V_GS(th)
R_DS(ON)
g_FS
C_lss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
V_SD
I_S
Condition
V_GS=0V I_D=250μA
V_DS=19.5V,V_GS=0V
V_GS=±10V,V_DS=0V
V_DS=V_GS,I_D=250μA
V_GS=4.5V, I_D=6A
V_GS=2.5V, I_D=5.2A
V_DS=5V,I_D=4A
V_DS=8V,V_GS=0V,
F=1.0MHz
V_DD=10V,I_D=1A
V_GS=4V,R_GEN=10Ω
V_DS=10V,I_D=4A,
V_GS=4.5V
V_GS=0V,I_S=2A
Min Typ Max Unit
20 21
-
V
-
-
1
μA
-
-
±100
nA
0.5 0.7
1.2
V
-
20
27
mΩ
-
28
37
mΩ
-
10
-
S
- 600
-
PF
- 330
-
PF
- 140
-
PF
-
18
-
nS
-
5
-
nS
-
43
-
nS
-
20
-
nS
-
11
-
nC
-
2.3
-
nC
-
2.5
-
nC
-
0.8
1.2
V
-
-
2
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
MORE Semiconductor Company Limited
http://www.moresemi.com
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