MSC0305W Datasheet, PDF (2/6 Pages) MORE Semiconductor Company Limited – -30V(D-S) Dual P-Channel Enhancement Mode Power MOS FET

MSC0305W
Electrical Characteristics (T_A=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics ^{(Note 3)}
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics ^(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics ^{(Note 4)}
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage ^{(Note 3)}
Symbol
Condition
Min Typ
BV_DSS
I_DSS
I_GSS
V_GS=0V I_D=-250μA
V_DS=-24V,V_GS=0V
V_GS=±20V,V_DS=0V
-30 -33
-
-
-
-
V_GS(th)
R_DS(ON)
g_FS
V_DS=V_GS,I_D=-250μA
V_GS=-10V, I_D=-5.1A
V_GS=-4.5V, I_D=-4.2A
V_DS=-15V,I_D=-4.5A
-1 -1.6
-
48
-
73
4
7
C_lss
- 520
V_DS=-15V,V_GS=0V,
C_oss
- 130
F=1.0MHz
C_rss
-
70
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
-
7
V_DD=-15V, ID=-1A,
V_GS=-10V,R_GEN=6Ω
-
13
-
14
-
9
-
12
V_DS=-15V,I_D=-5.1A,V_GS=-10V -
2.2
-
3
V_SD
V_GS=0V,I_S=-1.7A
-
-
Max
-
-1
±100
-3
55
105
-
-
-
-
-
-
-
-
-
-
-
-1.2
Unit
V
μA
nA
V
mΩ
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
MORE Semiconductor Company Limited
http://www.moresemi.com
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