|
MSP1030D Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 100V(D-S) P-Channel Enhancement Mode Power MOS FET | |||
|
MSP1030D
-100V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
â VDS =-100V,ID =-30A
RDS(ON) <58m⦠@ VGS=-10V
(Typ:50mâ¦)
â Super high dense cell design
â Advanced trench process technology
â Reliable and rugged
â High density cell design for ultra low On-Resistance
â ESD protested
Application
â Portable equipment and battery powered systems
Lead Free
PIN Configuration
Marking and pin assignment
TO-252-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSP1030D
MSP1030D
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100â)
ID (100â)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Derating factor
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-100
±20
-30
-21
-120
120
0.8
-55 To 175
Unit
V
V
A
A
A
W
W/â
â
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
RθJc
1.25
â/W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
|
▷ |