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MSP1013D Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – -100V(D-S) P-Channel Enhancement Mode Power MOS FET | |||
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MSP1013D
-100V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
â VDS =-100V,ID =-13A
RDS(ON) <200m⦠@ VGS=-10V
(Typ:170mâ¦)
â Super high dense cell design
â Advanced trench process technology
â Reliable and rugged
â High density celldesign for ultra low on-resistance
â ESD protested
Lead Free
Application
â Power switch
â DC/DC converters
PIN Configuration
Marking and pin assignment
TO-252 -2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSP1013D
MSP1013D
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100â)
ID (100â)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-100
±20
-13
-9.2
-30
40
0.32
110
-55 To 150
Unit
V
V
A
A
A
W
W/â
mJ
â
MORE Semiconductor Company Limited
http://www.moresemi.com
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