MSP0604L Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – -60V(D-S) P-Channel Enhancement Mode Power MOS FET

MSP0604L
-60V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● V_DS =-60V,I_D =-4A
R_DS(ON) <120mΩ @ V_GS=-10V
R_DS(ON) <170mΩ @ V_GS=-4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Lead Free
Application
● Load switch
● PWM application
PIN Configuration
Marking and pin Assignment
SOT-23-3L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
MSP0604L
Device Package
SOT-23-3L
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Symbol
VDS
VGS
Drain Current-Continuous
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
I_D
I_DM
P_D
T_J,T_STG
Thermal Characteristic
Thermal Resistance, Junction-to-Ambient^{(Note 2)}
R_θJA
Limit
-60
±20
-4
-12
1.5
-55 To 150
83.3
Unit
V
V
A
A
W
℃
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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