MSP0515D Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – -55V(D-S) P-Channel Enhancement Mode Power MOS FET

MSP0515D
-55V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● V_DS =-55V,I_D =-15A
R_DS(ON) <80mΩ @ V_GS=-10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard switched and high frequency circuits
● DC-DC Converter
PIN Configuration
Lead Free
Marking and pin assignment
TO-252-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSP0515D
MSP0515D
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_C=100℃)
I_D (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
I_DM
P_D
T_J,T_STG
Limit
-55
±20
-15
-10
-50
50
-55 To 150
Unit
V
V
A
A
A
W
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
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