MSP0406W Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – -40V(D-S) P-Channel Enhancement Mode Power MOS FET

MSP0406W
-40V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● V_DS =-40V,I_D =-6.2A
R_DS(ON) <25mΩ @ V_GS=-10V
R_DS(ON) <30mΩ @ V_GS=-4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Lead Free
Application
● Power switching application
● Hard switched and high frequency circuits
● DC-DC converter
PIN Configuration
Marking and pin assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSP0406W
MSP0406W
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(T_C=100℃)
I_D
I_D (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
I_DM
P_D
T_J,T_STG
Limit
-40
±20
-6.2
-4
40
2.5
-55 To 150
Unit
V
V
A
A
A
W
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6