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MSP0325W Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – - 30V(D-S) P-Channel Enhancement Mode Power MOS FET
MSP0325W
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS = -30V,ID = -25A
RDS(ON) <9mΩ @ VGS=-10V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
● Power management
● Load switch
Lead Free
PIN Configuration
Marking and pin assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSP0325W
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30
±20
-25
-70
3.5
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
36
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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