MSP0315D Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – -30V(D-S) P-Channel Enhancement Mode Power MOS FET

MSP0315D
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● V_DS =-30V,I_D =-15A
R_DS(ON) <54mΩ @ V_GS=-10V
R_DS(ON) <82mΩ @ V_GS=-4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
Lead Free
Application
● High side switch for full bridge converter
● DC/DC converter for LCD display
● Power Management in Portable Equipment and BPS
PIN Configuration
Marking and pin assignment
TO-252-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSP0315D
MSP0315D
TO-252-2L
Reel Size
-
Tape width
-
Quantity
2500PCS
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_C=100℃)
I_D (100℃)
Pulsed Drain Current
I_DM
Maximum Power Dissipation
P_D
Derating factor
Single pulse avalanche energy ^{(Note 5)}
E_AS
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
-30
±20
-15
-10.5
-45
2.5
0.4
40
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
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