MSP0309W Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – -30V(D-S) P-Channel Enhancement Mode Power MOS FET

MSP0309W
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
GENERAL FEATURES
● V_DS = -30V,I_D = -9.1A
R_DS(ON) < 35mΩ @ V_GS=-4.5V
R_DS(ON) < 20mΩ @ V_GS=-10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●Battery Switch
●Load switch
●Power management
PIN Configuration
Lead Free
Marking and pin Assignment
D
G
SOP-8 top view
S
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
MSP0309W
MSP0309W
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
T_C =25℃
Continuous Drain Current (T_J =150℃)
T_C =70℃
T_A =25℃
I_D
T_A =70℃
Drain Current-Pulsed (Note 1)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_{ST G}
Limit
-30
±20
-11
-9
-9.1
-7.2
-50
3.1
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
40
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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